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- The Global Gallium Nitride Semiconductor Devices market to grow at a CAGR of 18 percent over the period 2012-2016
The Global Gallium Nitride Semiconductor Devices market to grow at a CAGR of 18 percent over the period 2012-2016
- By Electronics.ca Research Network
- Published March 5, 2013
- Semiconductors
ATR-Newswire (Press Release) - Mar 5, 2013 - ELECTRONICS.CA PUBLICATIONS, the electronics industry market research and knowledge network, announces the availability of a new study entitled "Global Gallium Nitride Semiconductor Devices Market 2012-2016 ", based on an in-depth analysis covering the Americas, and the EMEA and APAC regions. The report aims to aid decision makers' understanding of the present and future landscape of the market.
The applications of Gallium nitride (GaN) are expanding aggressively across various segments, especially in the Automobile segment. The evolution of electric vehicles and hybrid electric vehicles is primarily driving the demand for GaN power semiconductors in the Automobile segment. In addition, the increase in infotainment applications in the Automobile segment is driving the demand for GaN opto-semiconductor devices in the global market. Furthermore, the increase in applications in the Defense segment is gaining traction in this market.
According to the report, semiconductor companies prefer GaN to any other substrate such as GaAs. Although GaAs has the required thermal conductivity, it can only operate with a maximum of 14 volts. In order to overcome this problem, semiconductor companies prefer GaN-on-silicon wafers and GaAs on silicon carbide (SiC) wafers, which have the capability to provide high thermal conductivity and generate high power.
Further, the report reveals that the lack of trained professionals in this field is slowing down the progress of this market.
The study was conducted using an objective combination of primary and secondary information including inputs from key participants in the industry. The report contains a comprehensive market and vendor landscape in addition to a SWOT analysis of the key vendors.
Details of the new report, table of contents and ordering information can be found on Electronics.ca Publications' web site. View the report: "Global Gallium Nitride Semiconductor Devices Market 2012-2016".
The applications of Gallium nitride (GaN) are expanding aggressively across various segments, especially in the Automobile segment. The evolution of electric vehicles and hybrid electric vehicles is primarily driving the demand for GaN power semiconductors in the Automobile segment. In addition, the increase in infotainment applications in the Automobile segment is driving the demand for GaN opto-semiconductor devices in the global market. Furthermore, the increase in applications in the Defense segment is gaining traction in this market.
According to the report, semiconductor companies prefer GaN to any other substrate such as GaAs. Although GaAs has the required thermal conductivity, it can only operate with a maximum of 14 volts. In order to overcome this problem, semiconductor companies prefer GaN-on-silicon wafers and GaAs on silicon carbide (SiC) wafers, which have the capability to provide high thermal conductivity and generate high power.
Further, the report reveals that the lack of trained professionals in this field is slowing down the progress of this market.
The study was conducted using an objective combination of primary and secondary information including inputs from key participants in the industry. The report contains a comprehensive market and vendor landscape in addition to a SWOT analysis of the key vendors.
Details of the new report, table of contents and ordering information can be found on Electronics.ca Publications' web site. View the report: "Global Gallium Nitride Semiconductor Devices Market 2012-2016".
