Power electronics switch to silicon carbide - Owing to its superior properties over silicon

Silicon Carbide (SiC), a wide bandgap material due to its superior thermal and electrical properties has emerged as a key enabling material that has the potential to displace silicon-based diodes and transistors in the high-power electronics area. This service researches the role of SiC as a substrate material for diodes and transistors for power electronic applications in the renewable energy sector, utilities and industrial sector. The research service provides insights on current state-of-the art and future technology trends associated with SiC based electronic devices. Opportunities for silicon carbide based diodes, unipolar and bipolar transistors for emerging and existing high power applications are evaluated in this research.

TABLE OF CONTENTS

1: Executive Summary

1.1: Research Outline

1.2: Key Findings

1.3: Research Methodology

2: Technology Snapshot and Trends

2.1: Technology Capability--Silicon Carbide in Power Electronics

2.2: Characteristics--Silicon Carbide Material

Table 1: Some common Crystal Defects (Adopted from Silicon Carbide Technology, CRC Press 2006)

2.3: SiC Vs Gallium Nitride (GaN) and Silicon (Si)

Table 2: SiC Vs Gallium Nitride (GaN) and Silicon (Si)

2.3.1: SiC Vs GaN and Si

2.4: SiC Crystal

2.5: SiC Power Electronics

2.6: New Developments--SiC Power Electronics

2.7: Technology Value Chain--Stakeholders and Their Stakes

3: Impact Assessment and Analysis

3.1: Mapping SiC Power Electronics to Applications

3.2: Market Impact of Key Innovations

3.3: Impact of Business Accelerators

3.4: Impact of Business Challenges

4: Adoption Cycle and Needs Assessment

4.1: Technology Adoption Cycle--Developers and Adopters

4.2: Demand Side Analysis

4.2.1: Standardized Manufacturing Processes:

4.2.2: Peripheral Circuitry and Packaging Needs:

4.2.3: Competitive Pricing, Quality, and Reliability:

5: Opportunity Evaluation and Roadmapping

Table 3: Potential Applications

Table 4: Potential Applications--Opportunity Analysis

5.1: Potential Applications--Global Addressable Market Size Inverters For Solar Power Generation

5.1.1: Solar Inverters Market

5.2: Potential Applications--Global Addressable Market Size Power Inverters For Wind Turbines

5.2.1: Power Inverter Market for Wind Turbines

5.3: Potential Applications--Global Addressable Market Size--Semiconductors for Hybrid Electric/Electric Vehicle Drive Train

5.3.1: Semiconductor Market for Hybrid Electric Vehicle/Electric Vehicle Drive Trains

Table 5: AHP--Level 0 Criteria--Definitions

5.4: AHP--Level 0 Criteria--Priority Values

Table 6: AHP--Level 0 Criteria--Priority Values

5.4.1: Insights

Table 7: AHP--Level 1 Criteria - Defined (2 of 3) Technology Aspects

Table 8: AHP--Level 1 Criteria - Defined (2 of 3) R & D and Financial Aspects

Table 9: AHP--Level 1 Criteria--Defined (3 of 3) Market Aspects

Table 10: AHP-Level 1 Criteria-Priority Values

5.5: AHP--Level 1 Criteria--Insights

5.5.1: Insights

5.6: AHP--Alternatives

5.6.1: Alternative 1-Silicon Carbide-based Schottky diodes

5.6.2: Alternative 2-Silicon Carbide-based IGBTs and MOSFETS

5.6.3: Alternative 3-Silicon Carbide power electronics with higher than 1700V ratings

5.7: AHP--Final Priority Values

Table 11: AHP--Final Priority Values

5.7.1: Insights

6: Key Contacts; Patents; Appendix

6.1: Key Contacts

6.2: Key Patents

6.3: Analytical Hierarchy Process (AHP)

Table 12: Analytical Hierarchy Process (AHP)

6.4: Opportunity Analysis