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This report analyzes the Global market for Strained Silicon in US$ Million. Annual Production forecasts are provided for the period 2006 through 2015. The report profiles 66 companies including many key and niche players such as Advanced Micro Devices, Inc., Applied Materials, Inc., ASM International NV, Atmel Corporation, AmberWave Systems Corporation, Canon, Inc., CEVA, Inc., Chartered Semiconductor Manufacturing Ltd., Honeywell International, Inc., International Business Machines Corp., Isonics Corporation, Infineon Technologies, AG, Intel Corp., International Rectifier Corp., KLA Tencor Corporation, Maxim Integrated Products, Inc., MEMC Electronic Materials, Inc., Micron Technology Inc., Mitsubishi Materials Corporation, NEC Electronics Corporation, Oki Semiconductor Company Ltd., Peregrine Semiconductor Corp., Renesas Technology Corporation, Sandia National Laboratories, Soitec S. A., STMicroelectronics N.V., Shanghai Simgui Technology Co., Ltd, Shin-Etsu Handotai Co., Ltd., Silicon Genesis Corporation, Siltronic AG, Texas Instruments Incorporated, Toshiba Corporation, Taiwan Semiconductor Manufacturing Company Limited, United Microelectronic Corporation, and Vitesse Semiconductor Corporation. Market data and analytics are derived from primary and secondary research. Company profiles are mostly extracted from URL research and reported select online sources.
TABLE OF CONTENTS
STRAINED SILICON MCP-1892
A GLOBAL STRATEGIC BUSINESS REPORT
CONTENTS
I. INTRODUCTION, METHODOLOGY & PRODUCT DEFINITIONS
Study Reliability and Reporting Limitations I-1
Disclaimers I-2
Data Interpretation & Reporting Level I-2
Quantitative Techniques & Analytics I-3
Product Definitions and Scope of Study I-3
II. EXECUTIVE SUMMARY
1. INDUSTRY OVERVIEW II-1
Introduction II-1
Moving Beyond Silicon II-1
Outlook II-2
Table 1: World Recent Past, Current & Future Analysis for
Strained Silicon - Independently Analyzed with Annual Sales
Figures in US$ Million for Years 2006 through 2015 (includes
corresponding Graph/Chart) II-2
Understanding Semiconductors II-3
The Heart of Any Electronic Device II-3
Keeping Pace with Moore's Law II-3
And Going Beyond II-4
Key Factors Influencing the Market II-4
The Cyclical Growth Demand Within the Industry II-4
Industry Keeping Pace with Gordon Moore's Predictions II-4
End-Market Demand Characteristics II-5
Increasing Content Within the Semiconductor II-5
Environmental Factors II-5
Key Market Drivers II-5
Technology Migration: A Pre-requisite to Survive Competition II-5
New Materials hold the Key II-6
Copper for Superior Electrical Conductivity II-6
Key Market Constraints II-6
Growing Payback Periods on Invested Capital: A Prime Concern II-6
Lack of Standards Acts Spoilsport II-6
Need for Greater Collaboration Among the Players II-7
Technological Innovations II-7
The 32-nm Generation Processor is Here II-7
Target '22-nm Generation Microprocessors', by 2011 II-8
UMC Announces the Validation of High-K/Metal-Gate Technology II-8
FEI Unveils the New TrueCrystal Package for Error-Free Strain
Profiling II-8
The Revolutionary Smart Cut(TM) Layer Transfer Technology From
SOITEC II-9
Smart Cut(TM) in the Manufacturing of Strained Silicon on
Insulator (sSOI) II-9
NGS (Next-Generation Strain): A Technology Revolution By SiGen II-9
New Process for Epitaxial Germanium Growth on Silicon Oxide II-10
New Technique to Evaluate the Degree of Strain II-10
Technological Barriers II-10
Faster Adaptation of holistic manufacturing practices: A
Challenge II-10
Controlling Threading Dislocation: A Major Barrier II-11
Future Directions: The Shape of Things to Come II-11
To Spearhead the Future Advances in Ultra High-Speed Computing II-11
Put a Firm Check on Investment Requirements II-12
Strained Silicon Technology To Spearhead the Future in High-
Performance Devices II-12
Project DECISIF II-12
Consolidation Gets Underway II-13
Landmark Deals Announced or Completed by Companies Engaged in
Strained Silicon and Semiconductor devices, During the Year
2007 & 2008 II-14
Competition Scenario II-14
The Historical Intel-IBM Rivalry II-14
Intel and AMD Battle it out in the 45-nm Processor Servers
Market II-15
SiGen: The Leader in Silicon-on-Insulator (SOI) Technology II-15
2. PRODUCT OVERVIEW II-16
Strain Engineering: A Primer II-16
Uni-Axial Strain and Bi-Axial Strain II-16
Straining Methods II-16
Strained Silicon Based Technologies II-17
Strained Silicon-Germanium (sSiGe) II-17
Hand in Hand with the Wireless Revolution II-18
Simplified Manufacturing Process II-18
Silicon on Insulator (SOI)/ Strained Silicon on Insulator (sSOI) II-19
Strained Silicon-on-Insulator (sSOI): The New Industry
Benchmark II-19
SOI Technology Acts as a Complementary to Strained Silicon
Technology II-19
SOI Tests China Waters II-20
Fabricating Methods of Strained Silicon Transistors II-20
Strained Silicon Multi-layer Structures II-21
Advantage of Strained Silicon Multi-layered structure Over
Others II-21
3. PRODUCT & TECHNOLOGY LAUNCHES/ DEVELOPMENTS II-22
Maxim's Single-Conversion Silicon Tuner Replaces Canned Tuner
for Hybrid Applications II-22
IQE Expands Manufacturing Processes Portfolio II-22
International Rectifier Launches DirectFET(R) MOSFET Chipset II-23
Jazz Semiconductor Introduces SiGe BiCMOS Tech for Next-
Generation Green Analog ICs II-23
AWR and austriamicrosystems Launch Process Design Kit for SiGe
BiCMOS Process Technology II-24
StrataLight Develops Silicon Germanium (SiGe) Chipset for
100GbE Transponders II-24
Tokyo Instruments Develops Basic Technology for Non-
Destructive Strain-Measuring Instrument II-24
Silicon Genesis Unveils the First 20 mm Solar Cell Foils II-25
Silicon Genesis Unveils the New PolyMax(TM) Process Technology II-25
Fujitsu Unveils New Power-Saving CMOS Technology II-25
UMC Announces the Launch of 65nm Customer Silicon, Using the
Proprietary URAM Technology II-26
Renesas Launches New Affordable Fabrication Technology II-26
Renesas Unveils New Technology for SRAM Implementation in 45nm
Generation Devices II-27
Epson Commences Large-Scale Production of 0.7inch Full HD HTPS
Panels II-27
Intel and UC Santa Barbara Develops the First Hybrid Silicon
Laser II-27
Maxim Integrated Products Launches DS1091L Silicon
EconOscillator(TM) II-28
Oki Electric Creates Extremely Low Cost-Effective µBOSA Chips
for FTTH Modules II-28
Texas Instruments Launches SiGe Process Based Op-Amps II-28
Sony, Toshiba and NEC Electronics Releases High Performance
System LSI II-29
Epson and JSR Pioneers Micro-Liquid Processes II-29
SiGen Presents Single Crystal Silicon Film Transfer on Substrate II-29
4. STRATEGIC CORPORATE DEVELOPMENTS II-30
Silicon Genesis Enters into Agreement with REC II-30
Silicon Genesis and NorSun Enter into Agreement II-30
Soitec Inaugurates New Fab Facility in Singapore II-31
AMCC Enters into Strategic Alliance with Silicon Image II-31
CopperGate Communication Acquires the HomePlug AV Business
from Conexant II-32
AMG Invest Acquires Stakes in Graphit Kropfmühl II-32
Globe Specialty Metals Acquires Stakes in Solsil II-32
Intrinsiq Materials Takes Over pSiNutria from pSiVida II-32
Permatex Acquires Anaerobicos II-32
AmberWave Acquires Aonex Technologies II-33
IBM Adopts the QuickCap NX Parasitic Extraction Software from
Magma II-33
IMEC Selects SOI MEMS Technology From Tronics Microsytems II-33
Silex System to Acquire Minority Stake in Translucent Photonics II-34
LSI Corp Takes Over Tarari II-34
E-Ton Solar Tech Takes Over ADEMA Technologies II-34
Gintech and MEMC Completes Agreement for Solar Wafer Supply II-35
MEMC, Suntech Signs Letter of Intent for Solar Wafer Supply II-35
AmberWave Signs License Agreement with LG Siltron on Strained
Silicon IP II-35
ARM Acquires Soisic II-35
Sumco to Takeover KEM II-36
Samsung and Siltronic to Construct New Fab Facility II-36
ARM Collaborates with Soitec (France) II-36
5. FOCUS ON SELECT GLOBAL PLAYERS II-37
Advanced Micro Devices, Inc. (USA) II-37
Applied Materials, Inc. (USA) II-37
ASM International NV (Netherlands) II-37
Atmel Corporation (USA) II-38
AmberWave Systems Corporation (USA) II-38
Canon, Inc. (Japan) II-39
CEVA, Inc. (USA) II-39
Chartered Semiconductor Manufacturing Ltd (Singapore) II-39
Honeywell International, Inc. (USA) II-40
International Business Machines Corp. (USA) II-40
Isonics Corporation (USA) II-40
Infineon Technologies, AG (Germany) II-41
Intel Corp. (USA) II-41
International Rectifier Corp. (USA) II-42
KLA Tencor Corporation (USA) II-42
Maxim Integrated Products, Inc. (USA) II-43
MEMC Electronic Materials, Inc. (USA) II-43
Micron Technology Inc. (USA) II-43
Mitsubishi Materials Corporation. (Japan) II-44
NEC Electronics Corporation (Japan) II-44
Oki Semiconductor Company Co. Ltd. (Japan) II-45
Peregrine Semiconductor Corp. (USA) II-45
Renesas Technology Corporation (Japan) II-46
Sandia National Laboratories (USA) II-46
Soitec S. A. (France) II-46
STMicroelectronics N.V. (Switzerland) II-46
Shanghai Simgui Technology Co., Ltd (China) II-47
Shin-Etsu Handotai Co., Ltd (Japan) II-47
Silicon Genesis Corporation (USA) II-47
Siltronic AG (Germany) II-48
Texas Instruments Incorporated (USA) II-48
Toshiba Corporation (Japan) II-48
Taiwan Semiconductor Manufacturing Company Limited (Taiwan) II-49
United Microelectronic Corporation (Taiwan) II-49
Vitesse Semiconductor Corporation (USA) II-49
III. COMPETITIVE LANDSCAPE
Total Companies Profiled: 66 (including Divisions/Subsidiaries - 70)
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Region/Country Players
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The United States 33
Japan 14
Europe 12
France 2
Germany 2
The United Kingdom 3
Rest of Europe 5
Asia-Pacific (Excluding Japan) 11
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