How 3D NAND Stacks Up

The NAND flash industry is at a technology inflection point.  Planar floating gate NAND flash memory is facing fundamental scaling challenges with the upcoming 16nm node the last generation of planar technology.  What’s next? How 3D NAND Stacks Up compares the 3d NAND flash memory alternatives and provides an independent view of the challenges, advantages and disadvantages of the various implementations and illuminates the 3D NAND status of the major industry players.  Details of the new report, table of contents and ordering information can be found on Electronics.ca Publications’ web site.

View the report:How 3D NAND Stacks Up“.

This research report covers:

NAND Flash Memory
NAND Flash Memory Technology Evolution
Floating Gate Memory Cell Scaling Challenges
Program Voltages and WL-WL Dielectric Breakdown
Number of Floating Gate Electrons, Charge Cross-talk, and Random Telegraph Noise
IPD Scaling of Electrical Thickness and Program Saturation: Can a Planar Cell be a Solution?
NAND alternative: Charge Trapping Memory Cell
3D NAND Alternatives
Conventional Approach
Samsung Stacking by Single Crystal Deposition
Concept
Advantages and Disadvantages
Challenges
Nonconventional approach
Horizontal channel – horizontal gate
Concept
Advantages/Disadvantages
Challenges
Vertical gate – Macronix TFT – Samsung VG-NAND
Concept
Advantages/Disadvantages
Challenges
Vertical Channel – Punch Structure
Toshiba BiCS
Concept – 1st Generation
Advantages and Disadvantages
Concept – 2nd Generation à p-BiCS structure
Challenges
Samsung  TCAT
Concept
Advantages
Disadvantages
Challenges
Hynix Vertical Cylindrical Floating-gate
Concept
Advantages
Disadvantages
Challenges
SK Hynix SMArT – Stacked Memory Array Transistor
Concept
Advantages
Disadvantages
Challenges
Vertical Channel – Channel Wrap-around Structure
Samsung VSAT – Vertical Stacked Array Transistor
Concept
Advantages
Disadvantages
Challenges
Comparison of 3D Memory Concepts
Cell Size
Disturbs
Cell Efficiency
Number of Bits per cell Capability
Yield
Performance
Endurance
Retention
Power Consumption
Stackability
Summary
Outlook
3D NAND Status
Intel/Micron
Macronix
Samsung
SanDisk/Toshiba
SK Hynix
3D NAND Roadmap
3D NAND Cost Trend

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