The commercial battle for next-generation power semiconductors is evolving. IGBTs, SiC and other technologies are geared for the niche-oriented markets at 1,700 volts and higher. But what is the best technology for the larger 600- and 1,200-volt markets? both super-junction MOSFETs and IGBTs are ramping up on 300mm wafers, making them less expensive than GaN and SiC. In comparison, SiC MOSFETs are ramping up on 100mm wafers, while GaN-on-silicon is running on 150mm substrates. This report analyzes and forecasts the traditional power semiconductor market as well as next generation devices. Market shares of vendors by type are presented.
This report covers the major segments of the market, namely, driving method (constant current LED driver and constant voltage LED driver), luminaire type (A-type, T-lamps, reflectors, decorative lamps, integral LED modules), end-user application (commercial lighting, industrial lighting, residential lighting, outdoor & traffic lighting and others), and geography. The report provides the competitive landscape of key players, including their growth strategies to enhance their position in the LED driver market for lighting. The report also provides the profiles of the key companies in the LED driver market for lighting including Osram GmbH (Germany), Harvard Engineering (U.K.), Texas Instruments (U.S.), Maxim Integrated (U.S.), Macroblock Inc. (Taiwan), Atmel Corporation (U.S.), General Electric (U.S.), Cree, Inc. (U.S.), ROHM Semiconductors (Japan), ON Semiconductor (U.S.), and AC Electronics (U.S.). The global LED driver market for lighting is expected to reach USD 24.98 Billion by 2022, at a CAGR of 26.3% between 2016 and 2022.
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